Comparison of methods to determine bandgaps of ultrathin HfO2 films using spectroscopic ellipsometry

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 4, 2011, Pages

  Di, Ming ^a   Bersch, Eric ^a   Diebold, Alain C ^a   Consiglio, Steven ^b   Clark, Robert D ^b   Leusink, Gert J ^b   Kaack, Torsten ^c  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b TEL TECHNOLOGY CENTER   (United States)

^c KLA TENCOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BAND-GAP VALUES; COMPARISON OF METHODS; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; DATA INVERSION; EXTINCTION COEFFICIENTS; HIGH-K OXIDES; LINEAR EXTRAPOLATION; ULTRA-THIN;

HAFNIUM; HAFNIUM OXIDES; MOS DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY;

ENERGY GAP;

EID: 79960484377     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3597838     Document Type: Article

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