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Volumn 103, Issue 9, 2008, Pages

The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate films

(6) Hill, D H a Bartynski, R A a Nguyen, N V b Davydov, Albert C b Chandler Horowitz, Deane b Frank, Martin M c

a RUTGERS UNIVERSITY (United States)

b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

c IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; ENERGY GAP; HAFNIUM COMPOUNDS; SPECTROSCOPIC ELLIPSOMETRY; X RAY DIFFRACTION;

CRYSTALLINITY; HAFNIUM OXIDE FILMS; HAFNIUM SILICATE FILMS; MONOCLINIC PHASES;

OXIDE FILMS;

EID: 43949138941 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2909442 Document Type: Article

Times cited : (42)

References (21)

1
- 33748614600
- 0018-8646
- E. P. Gusev, V. Narayanan, and M. M. Frank, IBM J. Res. Dev. 50, 387 (2006). 0018-8646
- (2006) IBM J. Res. Dev. , vol.50 , pp. 387
- Gusev, E.P.¹ Narayanan, V.² Frank, M.M.³

2
- 43949109034
- Materials Fundamentals of Gate Dielectrics, edited by A. A. Demkov and A. Navrotsky (Springer, Dordrecht).
- Materials Fundamentals of Gate Dielectrics, edited by, A. A. Demkov, and, A. Navrotsky, (Springer, Dordrecht, 2005).
- (2005)

3
- 31044455312
- 0034-4885 10.1088/0034-4885/69/2/R02.
- J. Robertson, Rep. Prog. Phys. 0034-4885 10.1088/0034-4885/69/2/R02 69, 327 (2006).
- (2006) Rep. Prog. Phys. , vol.69 , pp. 327
- Robertson, J.¹

4
- 0035872897
- 0021-8979 10.1063/1.1361065.
- G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 0021-8979 10.1063/1.1361065 89, 5243 (2001).
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

5
- 33750505198
- 0169-4332
- G. Lucovsky, Appl. Surf. Sci. 253, 311 (2006). 0169-4332
- (2006) Appl. Surf. Sci. , vol.253 , pp. 311
- Lucovsky, G.¹

6
- 20444477165
- 1530-4388 10.1109/TDMR.2005.845804.
- G. Lucovsky, C. C. Fulton, Y. Zhang, Y. Zou, J. Luning, L. F. Edge, J. L. Whitten, R. J. Nemanich, H. Ade, D. G. Schlom, V. V. Afanase'v, A. Stesmans, S. Zollner, D. Triyoso, and B. R. Rogers, IEEE Trans. Device Mater. Reliab. 1530-4388 10.1109/TDMR.2005.845804 5, 65 (2005).
- (2005) IEEE Trans. Device Mater. Reliab. , vol.5 , pp. 65
- Lucovsky, G.¹ Fulton, C.C.² Zhang, Y.³ Zou, Y.⁴ Luning, J.⁵ Edge, L.F.⁶ Whitten, J.L.⁷ Nemanich, R.J.⁸ Ade, H.⁹ Schlom, D.G.¹⁰ Afanase'V, V.V.¹¹ Stesmans, A.¹² Zollner, S.¹³ Triyoso, D.¹⁴ Rogers, B.R.¹⁵

7
- 19944387296
- 0167-9317 10.1016/j.mee.2005.04.052.
- G. Lucovsky, Y. Zhang, J. Luning, V. V. Afanase'v, A. Stesmans, S. Zollner, D. Triyoso, B. R. Rogers, and J. L. Whitten, Microelectron. Eng. 0167-9317 10.1016/j.mee.2005.04.052 80, 110 (2005).
- (2005) Microelectron. Eng. , vol.80 , pp. 110
- Lucovsky, G.¹ Zhang, Y.² Luning, J.³ Afanase'V, V.V.⁴ Stesmans, A.⁵ Zollner, S.⁶ Triyoso, D.⁷ Rogers, B.R.⁸ Whitten, J.L.⁹

8
- 27644547745
- 0003-6951 10.1063/1.2126136.
- N. V. Nguyen, A. V. Davydov, D. Chandler-Horowitz, and M. M. Frank, Appl. Phys. Lett. 0003-6951 10.1063/1.2126136 87, 192903 (2005).
- (2005) Appl. Phys. Lett. , vol.87 , pp. 192903
- Nguyen, N.V.¹ Davydov, A.V.² Chandler-Horowitz, D.³ Frank, M.M.⁴

9
- 79956031814
- 0003-6951 10.1063/1.1435411.
- X. Xu, M. Houssa, S. De Gendt, and M. Heyns, Appl. Phys. Lett. 0003-6951 10.1063/1.1435411 80, 1975 (2002).
- (2002) Appl. Phys. Lett. , vol.80 , pp. 1975
- Xu, X.¹ Houssa, M.² De Gendt, S.³ Heyns, M.⁴

10
- 34250785121
- IEEE 44th Annual International Reliability Physics Symposium Proceedings, 179.
- G. Bersuker, J. H. Sim, C. S. Park, C. D. Young, S. Nadkarni, R. Choi, and B. H. Lee, IEEE 44th Annual International Reliability Physics Symposium Proceedings, 179 (2006).
- (2006)
- Bersuker, G.¹ Sim, J.H.² Park, C.S.³ Young, C.D.⁴ Nadkarni, S.⁵ Choi, R.⁶ Lee, B.H.⁷

11
- 33646642931
- 0163-1829 10.1103/PhysRevB.40.5715.
- F. M. F. de Groot, M. Grioni, J. C. Fuggle, J. Ghijsen, G. A. Sawatzky, and H. Petersen, Phys. Rev. B 0163-1829 10.1103/PhysRevB.40.5715 40, 5715 (1989).
- (1989) Phys. Rev. B , vol.40 , pp. 5715
- De Groot, F.M.F.¹ Grioni, M.² Fuggle, J.C.³ Ghijsen, J.⁴ Sawatzky, G.A.⁵ Petersen, H.⁶

12
- 0027640805
- 0038-1098 10.1016/0038-1098(93)90209-6.
- L. Soriano, M. Abbate, J. C. Fuggle, M. A. Jimenez, J. M. Sanz, C. Mythen, and H. A. Padmore, Solid State Commun. 0038-1098 10.1016/0038-1098(93) 90209-6 87, 699 (1993).
- (1993) Solid State Commun. , vol.87 , pp. 699
- Soriano, L.¹ Abbate, M.² Fuggle, J.C.³ Jimenez, M.A.⁴ Sanz, J.M.⁵ Mythen, C.⁶ Padmore, H.A.⁷

13
- 28844452482
- 0003-6951 10.1063/1.2143132.
- M. H. Cho, K. B. Chung, C. N. Whang, D. W. Lee, and D. H. Ko, Appl. Phys. Lett. 0003-6951 10.1063/1.2143132 87, 242906 (2005).
- (2005) Appl. Phys. Lett. , vol.87 , pp. 242906
- Cho, M.H.¹ Chung, K.B.² Whang, C.N.³ Lee, D.W.⁴ Ko, D.H.⁵

14
- 3142724745
- 0003-6951 10.1063/1.1764595.
- M. H. Cho, D. W. Moon, S. A. Park, Y. K. Kim, K. Jeong, S. K. Kang, D. H. Ko, S. J. Doh, J. H. Lee, and N. I. Lee, Appl. Phys. Lett. 0003-6951 10.1063/1.1764595 84, 5243 (2004).
- (2004) Appl. Phys. Lett. , vol.84 , pp. 5243
- Cho, M.H.¹ Moon, D.W.² Park, S.A.³ Kim, Y.K.⁴ Jeong, K.⁵ Kang, S.K.⁶ Ko, D.H.⁷ Doh, S.J.⁸ Lee, J.H.⁹ Lee, N.I.¹⁰

15
- 33745801074
- 0003-6951 10.1063/1.2219126.
- H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, and K. Usuda, Appl. Phys. Lett. 0003-6951 10.1063/1.2219126 89, 012102 (2006).
- (2006) Appl. Phys. Lett. , vol.89 , pp. 012102
- Takahashi, H.¹ Okabayashi, J.² Toyoda, S.³ Kumigashira, H.⁴ Oshima, M.⁵ Ikeda, K.⁶ Liu, G.L.⁷ Liu, Z.⁸ Usuda, K.⁹

16
- 33745261722
- 0021-8979 10.1063/1.2206610.
- H. Takahashi, J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, and K. Usuda, J. Appl. Phys. 0021-8979 10.1063/1.2206610 99, 113710 (2006).
- (2006) J. Appl. Phys. , vol.99 , pp. 113710
- Takahashi, H.¹ Okabayashi, J.² Toyoda, S.³ Kumigashira, H.⁴ Oshima, M.⁵ Ikeda, K.⁶ Liu, G.L.⁷ Liu, Z.⁸ Usuda, K.⁹

17
- 24144441753
- 0003-6951 10.1063/1.1984091.
- H. Takahashi, S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, Y. Sugita, G. L. Liu, Z. Liu, and K. Usuda, Appl. Phys. Lett. 0003-6951 10.1063/1.1984091 87, 012903 (2005).
- (2005) Appl. Phys. Lett. , vol.87 , pp. 012903
- Takahashi, H.¹ Toyoda, S.² Okabayashi, J.³ Kumigashira, H.⁴ Oshima, M.⁵ Sugita, Y.⁶ Liu, G.L.⁷ Liu, Z.⁸ Usuda, K.⁹

18
- 21044444062
- 0021-8979 10.1063/1.1899228.
- S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Yamashita, M. Niwa, K. Usuda, and G. L. Liu, J. Appl. Phys. 0021-8979 10.1063/1.1899228 97, 104507 (2005).
- (2005) J. Appl. Phys. , vol.97 , pp. 104507
- Toyoda, S.¹ Okabayashi, J.² Kumigashira, H.³ Oshima, M.⁴ Yamashita, K.⁵ Niwa, M.⁶ Usuda, K.⁷ Liu, G.L.⁸

19
- 34547437348
- 0021-8979 10.1063/1.2750406.
- E. E. Hoppe, R. S. Sorbello, and C. R. Aita, J. Appl. Phys. 0021-8979 10.1063/1.2750406 101, 123534 (2007).
- (2007) J. Appl. Phys. , vol.101 , pp. 123534
- Hoppe, E.E.¹ Sorbello, R.S.² Aita, C.R.³

20
- 8644235884
- 0013-4651 10.1149/1.1784821.
- D. Triyoso, R. Liu, D. Roan, M. Ramon, N. V. Edwards, R. Gregory, D. Werho, J. Kulik, G. Tam, E. Irwin, X. -D. Wang, L. B. La, C. Hobbs, R. Garcia, J. Baker, B. E. White, Jr., and P. Tobin, J. Electrochem. Soc. 0013-4651 10.1149/1.1784821 151, F220 (2004).
- (2004) J. Electrochem. Soc. , vol.151 , pp. 220
- Triyoso, D.¹ Liu, R.² Roan, D.³ Ramon, M.⁴ Edwards, N.V.⁵ Gregory, R.⁶ Werho, D.⁷ Kulik, J.⁸ Tam, G.⁹ Irwin, E.¹⁰ Wang, X.-D.¹¹ La, L.B.¹² Hobbs, C.¹³ Garcia, R.¹⁴ Baker, J.¹⁵ White Jr., B.E.¹⁶ Tobin, P.¹⁷

21
- 35148872144
- D. -Y. Cho, J. -M. Lee, S. -J. Oh, H. Jang, J. -Y. Kim, J.-H. Park, and A. Tanaka, Phys. Rev. B 76, 165411 (2007).
- (2007) Phys. Rev. B , vol.76 , pp. 165411
- Cho, D.-Y.¹ Lee, J.-M.² Oh, S.-J.³ Jang, H.⁴ Kim, J.-Y.⁵ Park, J.-H.⁶ Tanaka, A.⁷

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