Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2424-2436

  Ferlauto, A S ^a   Ferreira, G M ^a   Pearce, J M ^a   Wronski, C R ^a   Collins, R W ^a   Deng, Xunming ^b   Ganguly, Gautam ^c  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF TOLEDO   (United States)

^c BP Solar ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; ABSORPTION COEFFICIENTS; ALLOY MATERIALS; ANALYSIS AND SIMULATION; ANALYTICAL EXPRESSIONS; DIELECTRIC FUNCTIONS; DIPOLE MATRIX ELEMENTS; GAP REGIONS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); IMAGINARY PARTS; INDEPENDENT PARAMETERS; INDEX OF REFRACTION; KRAMERS-KRONIG; LORENTZ OSCILLATOR; MULTI JUNCTION SOLAR CELLS; NEAR INFRARED; OPTICAL FUNCTION; PARABOLIC BANDS; PHOTON ENERGY; PHOTOVOLTAIC DEVICES; QUANTUM EFFICIENCY SPECTRA; SAMPLE SETS; SILICON GERMANIUM; SOLAR SPECTRUM; THIN FILM PHOTOVOLTAICS; URBACH TAIL;

ALLOYS; AMORPHOUS SEMICONDUCTORS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ENERGY GAP; FILM PREPARATION; GERMANIUM; PHOTOVOLTAIC EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SAMPLING; THIN FILMS;

SILICON;

EID: 0036732205     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1497462     Document Type: Article

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