Determination of band alignment of hafnium silicon oxynitride/silicon (HfSiON/Si) structures using electron spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 3, 2005, Pages 1301-1305

  Kamimuta, Yuuichi ^a   Koike, Masahiro ^a   Ino, Tsunehiro ^a   Suzuki, Masamichi ^a   Koyama, Masato ^a   Tsunashima, Yoshitaka ^a   Nishiyama, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Bandgap; Conduction band; Energy barrier; Hf3n 4; HfN; HfO2; HfSiON; High k gate dielectrics; Valence band

Indexed keywords

CONCENTRATION (PROCESS); ELECTRIC CONDUCTANCE; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY GAP; MOLECULAR STRUCTURE; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

BANDGAP; CONDUCTION BANDS; ENERGY BARRIERS; HF3N4; HFN; HFSION; HIGH-K GATE DIELECTRICS; VALENCE BANDS;

HAFNIUM COMPOUNDS;

EID: 19944400822     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1301     Document Type: Article

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