Intrinsic bonding defects in transition metal elemental oxides

Microelectronics Reliability

Volumn 46, Issue 9-11, 2006, Pages 1623-1628

  Lucovsky, G ^a   Seo, H ^a   Fleming, L B ^a   Ulrich, M D ^a,b   Luning J ^c   Lysaght, P ^d   Bersuker, G ^d  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b U S ARMY RESEARCH OFFICE   (United States)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^d SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN BOUNDARIES; HAFNIUM COMPOUNDS; HOLE TRAPS; NANOSTRUCTURED MATERIALS; OXIDES; SILICON;

AB INITIO THEORY; GRAIN BOUNDARY DEFECTS; TRANSITION METAL ELEMENTAL OXIDES;

TRANSITION METAL COMPOUNDS;

EID: 33748179759     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.07.032     Document Type: Article

References (11)

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