Spectroellipsometric assessment of HfO2 thin films

Thin Solid Films

Volumn 515, Issue 2 SPEC. ISS., 2006, Pages 623-626

  Buiu, O ^a   Lu, Y ^a   Mitrovic, I Z ^a   Hall, S ^a   Chalker, P ^a   Potter, R J ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Dielectric constant; Dielectric layers; Hafnium oxide; Leakage current; MOS; Optical constants; Spectroscopic ellipsometry

Indexed keywords

ABSORPTION; DIELECTRIC FILMS; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; OPTICAL PROPERTIES; PERMITTIVITY; SPUTTERING;

DIELECTRIC LAYERS; HAFNIUM OXIDE; OPTICAL CONSTANTS; SPECTROSCOPIC ELLIPSOMETRY;

THIN FILMS;

EID: 33748750082     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.215     Document Type: Article

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