Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La 2 O 3 /Si(1 0 0) interfacial transition layer

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 493-496

  Nohira, H ^a   Shiraishi, T ^a   Takahashi, K ^a   Hattori, T ^a   Kashiwagi, I ^b   Ohshima, C ^b   Ohmi, S ^b   Iwai, H ^b   Joumori, S ^c   Nakajima, K ^c   Suzuki, M ^c   Kimura, K ^c  

^a TOKYO CITY UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c KYOTO UNIVERSITY   (Japan)

Author keywords

Angle resolved photoelectron spectroscopy; Depth profiling; Electronic band structure; High dielectrics; La 2 O 3; Rutherford back scattering

Indexed keywords

BINDING ENERGY; DIELECTRIC DEVICES; ENERGY DISSIPATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICATES; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE-RESOLVED PHOTOELECTRON SPECTROSCOPY; DEPTH PROFILING; ELECTRONIC BAND STRUCTURE; TRANSITION METAL OXIDES;

LANTHANUM COMPOUNDS;

EID: 3342974674     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.032     Document Type: Conference Paper

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