Optical characterization of high-k dielectrics HfO2 thin films obtained by MOCVD

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4876, Issue 2, 2002, Pages 1236-1246

  Modreanu, M ^a   Hurley, P K ^a   O'Sullivan, B J ^a   O'Looney, B ^a   Senateur, J P ^b   Rousell, H ^b   Rousell, F ^b   Audier, M ^b   Dubourdieu, C ^b   Boyd, I W ^c   Fang, Q ^c   Leedham, T L ^d   Rushworth, S ^d   Jones, A C ^d   Davies, H ^d   Jimenez, C ^e  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

^d Inorgtech Limited   (United Kingdom)

^e JIPELEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; POROSITY; RAPID THERMAL ANNEALING; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

MONOCLINIC;

REFRACTIVE INDEX;

EID: 0042231963     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.463984     Document Type: Conference Paper

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