Low temperature oxidation and selective etching of chemical vapor deposition a-SiC:H films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1281-1287

  Baklanov, M R ^a,b   Van Hove, M ^a   Mannaert, G ^a   Vanhaelemeersch, S ^a   Bender, H ^a   Conard, T ^a   Maex, K ^a,c  

^a IMEC   (Belgium)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; OXIDATION; PHOTORESISTS; SILICON CARBIDE;

PHOTORESIST STRIPPING; SELECTIVE REMOVAL;

AMORPHOUS FILMS;

EID: 0034186924     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591375     Document Type: Article

References (11)

1. K. Xie, J. H. Zhao, J. R. Flemish, T. Burke, W. R. Bucchwald, G. Lorenzo, and H . Singh, IEEE Electron Device Lett. EDL-17, 142 (1996).
2. M. J. Loboda, J. A. Seifferly, C. M. Grove, and R. F. Schneider, Environmental, Safety, and Health Issues in IC Production, edited by R. Reif, M. Heyns, A. Bowling, and A. Tonti, Mater. Res. Soc. Symp. Proc. 447, 145 (1997).
3. J-F. Christaud, W. Helle, C. Ranft, and C. Gapasin, Solid State Technol. 42, S13 (1999).
4. K. Eberhardt, E. Lotter, M. Heintze, H.-D. Mohring, and G. H. Bauer, Mater. Res. Soc. Symp. Proc. 268, 673 (1992).
5. M. Katiyar, Y. H. Yong, and S. R. Abelson, J. Appl. Phys. 78, 1659 (1995).
6. S. W. King, R. J. Nemanich, and R. F. Davis, J. Electrochem. Soc. 146, 1910 (1999).
7. K. Pressel, M. Franz, D. Kruger, H. J. Osten, B. Garrido, and J. R. Morante, J. Vac. Sci. Technol. B 16, 1757 (1998).
8. B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 3770 (1965).
9. P. Barret, Cinetique Heterogene (Gauthier-Villars, Paris, 1973).
10. NIST X-ray Photoelectron Spectroscopy Database, Version 1.01, 1989.
11. L. Q. Qian, S. Bothra, X. W. Lin, I. Harvey, M. Welling, and D. Pramanik, in Proceedings of the 1997 VMIC Conference (unpublished), pp. 615-617.