Intrinsic stress fracture energy measurements for PECVD thin films in the SiOxCyNz:H system

Microelectronics Reliability

Volumn 49, Issue 7, 2009, Pages 721-726

  King, S W ^a   Gradner, J A ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITED; CRITICAL THICKNESS; H SYSTEMS; INTRINSIC STRESS; LOW DIELECTRIC CONSTANTS; SION FILM;

FRACTURE; FRACTURE ENERGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; THIN FILMS;

FRACTURE TOUGHNESS;

EID: 67649440958     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.04.006     Document Type: Article

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