Bonding and thermal reactivity in thin a-SiC:H films grown by methylsilane CVD

Journal of Physical Chemistry B

Volumn 101, Issue 45, 1997, Pages 9195-9205

  Lee, Moon Sook ^a   Bent, Stacey F ^a  

^a NEW YORK UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; ETCHING; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PYROLYSIS; SINGLE CRYSTALS; TEMPERATURE PROGRAMMED DESORPTION; THIN FILMS;

METHYLSILANE; MULTIPLE INTERNAL REFLECTION FOURIER TRANSFORM INFRARED SPECTROSCOPY;

SILICON CARBIDE;

EID: 0031556580     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp9718459     Document Type: Article

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