Understanding spectroscopic phonon-assisted defect features in CVD grown 3C-SiC/Si(1 0 0) by modeling and simulation

Computational Materials Science

Volumn 30, Issue 3-4 SPEC. ISS., 2004, Pages 419-424

  Talwar, Devki N ^a   Feng, Z C ^b  

^a INDIANA UNIVERSITY OF PENNSYLVANIA   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

3C SiC; Green function; Raman scattering; Simulation

Indexed keywords

BACKSCATTERING; CARBONIZATION; EPITAXIAL GROWTH; GREEN'S FUNCTION; PHOTOLUMINESCENCE; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE;

FEASIBILITY; LONGITUDINAL OPTICAL (LO); MICRO-CRACKING; SIC FILMS;

CHEMICAL VAPOR DEPOSITION;

EID: 3142719807     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2004.02.035     Document Type: Conference Paper

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