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Materials Science and Engineering: A

Volumn 253, Issue 1-2, 1998, Pages 296-300

Relaxation phenomena in keV-ion implanted hydrogenated amorphous silicon carbide

(3) Musumeci, P a Calcagno, L a Makhtari, A b

a UNIVERSITY OF CATANIA (Italy)

b MOULAY ISMAIL UNIVERSITY (Morocco)

Author keywords

Amorphous material; Hydrogen; Infrared; Ion implantation; Relaxation; Silicon carbide

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL BONDS; CRYSTAL DEFECTS; HYDROGENATION; INFRARED SPECTROSCOPY; ION IMPLANTATION; LIGHT ABSORPTION; MOLECULAR VIBRATIONS; RELAXATION PROCESSES;

HIGH FLUENCE IMPLANTATION; STRETCHING MODE VIBRATIONS;

SILICON CARBIDE;

EID: 0005556394 PISSN: 09215093 EISSN: None Source Type: Journal
DOI: 10.1016/s0921-5093(98)00739-4 Document Type: Article

Times cited : (13)

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