Contributions to the static dielectric constant of low-k xerogel films derived from ellipsometry and IR spectroscopy

Thin Solid Films

Volumn 455-456, Issue , 2004, Pages 433-437

  Himcinschi, C ^a   Friedrich, M ^a   Fruhauf S ^a   Schulz, S E ^a   Gessner, T ^a   Zahn, D R T ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Ellipsometry; Infrared spectroscopy; Low k dielectric; Xerogel films

Indexed keywords

COMPOSITION; ELLIPSOMETRY; HYDROPHOBICITY; INFRARED SPECTROSCOPY; REFRACTIVE INDEX; SILICA GEL; SOL-GELS; SPIN COATING; SYNTHESIS (CHEMICAL);

LOW K DIELECTRIC; VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY (VASE); VOID FRACTION; XEROGEL FILMS;

THIN FILMS;

EID: 17144468089     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.241     Document Type: Conference Paper

References (16)

1. Havemann R.H., Jain M.K., List R.S., Ralston A.R., Shih W.-Y., Jin C., Chang M.C., Zielinski E.M., Dixit G.A., Singh A., Russell S.W., Gaynor J.K., Mckerrow A.J., Lee W.W. Mater. Res. Soc. Symp. Proc. 511:1998;3.
2. Maex K., Baklanov M.R., Shamiryan D., Iacopi F., Brongersma S.H., Yanovitskaya Z.S. J. Appl. Phys. 93:2003;8793.
3. Jin C., Luttmer J.D., Smith D.M., Ramos T.A. MRS Bull. October 1997;39.
4. Hong J.-K., Yang H.-S., Jo M.-H., Park H.-H., Choi S.-Y. Thin Solid Films. 308-309:1997;495.
5. Nitta S.V., Pisupatti V., Jain A., Wayner P.C. Jr, Gill W.N., Plawsky J.L. J. Vac. Sci. Technol. B. 17:1999;205.
6. Aoi N. Jpn. J. Appl. Phys. 36:1997;1355.
7. Brinker C.J., Scherer G.W. Sol-Gel Science: Physics and Chemistry of Sol-Gel Processing. 1990;Academic, New York.
8. Schulz S.E., Koerner H., Murray C., Streiter I., Gessner T. Microelectron. Eng. 55:2001;45.
9. Himcinschi C., Friedrich M., Frühauf S., Streiter I., Schulz S.E., Gessner T., Baklanov M.R., Mogilnikov K.P., Zahn D.R.T. Anal. Bioanal. Chem. 374:2002;654.
10. Palik E.D. Handbook of Optical Constants of Solids. 1985;Academic Press, New York.
11. Himcinschi C., Friedrich M., Murray C., Streiter I., Schulz S.E., Gessner T., Zahn D.R.T. Semicond. Sci. Technol. 16:2001;806.
12. Baklanov M.R., Mogilnikov K.P., Polovinkin V.G., Dultsev F.N. J. Vac. Sci. Technol. B. 18:2000;1385.
13. Han S.M., Aydil E.S. J. Appl. Phys. 83:1998;2172.
14. Lim S.W., Shimogaki Y., Nakano Y., Tada K., Komiyama H. Jpn. J. Appl. Phys. 35:1996;1468.
15. Kim J.Y., Hwang M.S., Kim Y.H., Kim H.J., Lee Y. J. Appl. Phys. 90:2001;2469.
16. S. Fruehauf, I. Streiter, R. Puschmann, S.E. Schulz, C. Himcinschi, C.M. Flannery, T. Gessner, D.R.T. Zahn, Advanced Metallization Conference (AMC) 2002, San Diego, USA, Conference Proceedings ULSI XVIII, 2003, p. 507.