New solutions for intermetal dielectrics using trimethylsilane-based PECVD processes

Microelectronic Engineering

Volumn 50, Issue 1-4, 2000, Pages 15-23

  Loboda, M J ^a  

^a DOW CORNING CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ELECTRIC INSULATING MATERIALS; HYDROGENATION; NITRIDES; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICE MANUFACTURE; SILANES; SILICA; SILICON CARBIDE; THIN FILMS;

INTERMETAL DIELECTRICS; TRIMETHYLSILANES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033639653     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00259-2     Document Type: Article

References (6)

1. 4 in plasma processes employed in integrated circuit production. Environmental Safety and Health Issues in IC Production. Mat. Res. Soc. Symp. Proc. Vol. 447:1997;145-150.
2. Loboda M.J., Seifferly J.A., Grove C.M., Schneider R.F. Using trimethylsilane to improve safety, throughput and versatility in PECVD processes. Electrochem. Soc. Proc.: Silicon Nitride and Silicon Dioxide Thin Insulating Films. Vol. 97-10:1997;443-452.
3. M.J. Loboda, J.A. Seifferly, R.F. Schneider, C.M. Grove, Deposition of low-k dielectric films using trimethylsilane: presented at the 194th Meeting of the Electrochemical Society, Boston, MA, November 1998.
4. P. Xu, K. Huang, A. Patel, S. Rathi, B. Tang, J. Ferguson, J. Huang, C. Ngai, M. Loboda, to be published at the 1999 IEEE Intl Interconnection Technology Conference, San Francisco, California.
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6. Patrick W.J., Schwartz G.C., Chapple-Sokol J.D., Carruthers R., Olsen K. Plasma-enhanced CVD of silicon dioxide films using tetraethoxysilane and oxygen: characterization and properties of films. J. Electrochem. Soc. 139:(9):1992;2604.