Thermal dissociation process of hydrogen atoms in plasma-enhanced chemical vapor deposited silicon nitride films

Journal of Applied Physics

Volumn 84, Issue 9, 1998, Pages 5243-5247

  Maeda, Masahiko ^a   Itsumi, Manabu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005586127     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368813     Document Type: Article

References (11)

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