Device physics and performance potential of III-V field-effect transistors

Fundamentals of III-V Semiconductor MOSFETs

Volumn , Issue , 2010, Pages 31-49

  Liu, Yang ^a   Pal, Himadri S ^a   Lundstrom, Mark S ^a   Kim, Dae Hyun ^b   Alamo, Jesús A Del ^c   Antoniadis, Dimitri A ^c  

^a Purdue University   (United States)

^b Massachusetts Institute of Technology   (United States)

^c Department of Electrical Engineering and Computer Science   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79957655366     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/978-1-4419-1547-4_3     Document Type: Chapter

References (48)

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