Scalability of sub-100 nm thin-channel InAs PHEMTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2009, Pages 132-135

  Kim, Dae Hyun ^a   Del Alamo, Jesús A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MATERIALS; CHANNEL THICKNESS; ELECTROSTATIC INTEGRITY; HIGH FREQUENCY CHARACTERISTICS; INAS; LOGIC APPLICATIONS; SCALING BEHAVIOR; SUB-100 NM; SUBTHRESHOLD SWING;

ELECTROSTATICS; INDIUM ARSENIDE; INDIUM PHOSPHIDE;

SEMICONDUCTING INDIUM;

EID: 70349498304     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2009.5012459     Document Type: Conference Paper

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4. A. Endoh et al., JJAP, p. 2214, 2003.
5. D.-H. Kim et al., IEEE EDL, p. 830, 2008.
6. D.-H. Kim et al., IEDM, p. 146, 2008.
7. M. Somverville et al., IEEE TED, p. 922, 2000.
8. T. Suemitsu et al., IEEE TED, p. 2390, 1998.