Simulation of electron transport in high-mobility MOSFETs: Density of states bottleneck and source starvation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 109-112

  Fischetti, M V ^a   Wang, L ^b   Yu, B ^b   Sachs, C ^a   Asbeck, P M ^b   Taur, Y ^b   Rodwell, M ^c  

^a University of Massachusetts   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; CARRIER CONCENTRATION; CIVIL AVIATION; CONCENTRATION (PROCESS); ELECTRON DEVICES; ELECTRONS; MOSFET DEVICES; OPTICAL RESOLVING POWER; OPTIMIZATION; SEMICONDUCTING INDIUM; THRESHOLD CURRENT DENSITY;

DENSITY OF STATES; DOPING DENSITIES; EFFECTIVE MASSES; ELECTRON TRANSPORT; HIGH-MOBILITY; LOW DENSITY; MOMENTUM RELAXATION; MONTE-CARLO SIMULATIONS; MOSFETS; NON-PARABOLICITY; QUASI-BALLISTIC; SOURCE REGIONS; VELOCITY STATES;

MONTE CARLO METHODS;

EID: 50249185663     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418876     Document Type: Conference Paper

References (8)

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