Performance analysis of III-V materials in a double-gate nano-MOSFET

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 113-116

  Cantley, Kurtis D ^c   Liu, Yang ^a   Pal, Himadri S ^a   Low, Tony ^a   Ahmed, Shaikh S ^b   Lundstrom, Mark S ^a  

^a PURDUE UNIVERSITY   (United States)

^b Southern Illinois University Carbondale   (United States)

^c The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON DEVICES; ELECTRONS; INDIUM ARSENIDE; NANOTECHNOLOGY; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

BALLISTIC ELECTRON TRANSPORT; DEVICE STRUCTURES; DOUBLE GATES; EFFECTIVE MASSES; N-MOSFETS; NANO SCALING; NUMERICAL SIMULATIONS; PERFORMANCE ANALYSES;

MOSFET DEVICES;

EID: 50249158622     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418877     Document Type: Conference Paper

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