NEGF analysis of InGaAs schottky barrier double gate MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Pal, Himadri S ^a   Low, Tony ^a   Lundstrom, Mark S ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTHS; DOUBLE-GATE MOSFETS; MOS FETS; OPERATING CONDITIONS; SCHOTTKY BARRIERS; SUB THRESHOLDS; SUB-THRESHOLD SWINGS; SYSTEMATIC STUDIES;

ELECTRON DEVICES; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 64549089561     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796843     Document Type: Conference Paper

References (12)

1. D-H. Kim and J. A. del Alamo, IEDM Tech. Dig., pp 629-632, 2007.
2. Y. Xuan, Y. Q. Wu, and P. D. Ye, Elec. Dev. Let., 29, pp. 294-296, 2008.
3. M. Passlack et al., IEDM Tech. Dig., pp 621-624, 2007.
4. N. Neophytos et al., in press, IEEE TED, 2008.
5. M. V. Fischetti et al., IEDM Tech. Dig., pp 109-112, 2007.
6. Z. Ren, R. Venugopal, S. Goasguen, S. Datta, and M. S. Lundstrom, IEEE Trans. Elec. Dev., 50, pp. 1914-1925, 2003.
7. T. B. Boykin, G. Klimeck, R. C. Bowen, and F. Oyafuso, Phys. Rev. B, 66, 125207, 2002.
8. Z. G. Zhu et al., IEDM Tech. Dig., pp 807-810, 2006.
9. K. D. Cantley et al., IEDM Tech. Dig., pp 113-116, 2007.
10. Q. T. Zhao et al., Appl. Phys. Let., 86, 062108, 2005.
11. J. Knoch, M. Zhang, S. Mantl, and J. Appenzeller, IEEE Trans. Elec. Dev., 53, pp. 1669-1674, 2006.
12. M. Shin, IEEE Trans. Elec. Dev., 55, pp. 737-742, 2008.