Performance analysis of 60-nm gate-length III-V InGaAs HEMTs: Simulations versus experiments

IEEE Transactions on Electron Devices

Volumn 56, Issue 7, 2009, Pages 1377-1387

  Neophytou, Neophytos ^a,b   Rakshit, Titash ^c   Lundstrom, Mark S ^a  

^a Purdue University   (United States)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

^c INTEL CORPORATION   (United States)

Author keywords

Apparent; Ballistic; High electron mobility transistor (HEMT); III V; InAs; InGaAs; Mobility; Nonequilibrium Green's function (NEGF); Nonparabolicity; Quantum; Series resistance; Source exhaustion; Source starvation

Indexed keywords

APPARENT; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); III-V; INAS; INGAAS; MOBILITY; NONEQUILIBRIUM GREEN'S FUNCTION (NEGF); NONPARABOLICITY; QUANTUM; SERIES RESISTANCE; SOURCE EXHAUSTION; SOURCE STARVATION;

BALLISTICS; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIFFERENTIAL EQUATIONS; DRAIN CURRENT; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GREEN'S FUNCTION; INDIUM ARSENIDE; RESONANT TUNNELING; SEMICONDUCTING INDIUM; SIMULATORS; TRANSCONDUCTANCE; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 67650100004     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2021437     Document Type: Article

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