Scaling behavior of in0.7Ga0.3as HEMTs for logic

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Kim, Dae Hyun ^a   Del Alamo, Jesús A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SCALING BEHAVIORS; VERTICAL SCALING;

ELECTRON DEVICES;

EID: 46049103610     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346728     Document Type: Conference Paper

References (8)

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4. D.-H. Kim et al., in CS-MANTECH Dig., pp.251-254(2006).
5. K. Shinohara et al., in 16th IEEE Indium Phosphide and Related Material (IPRM) Conf, pp. 721-726 (2004).
6. R.-H. Yan et al., IEEE Trans. Electron Device (TED), pp. 1704-1710 (1992).
7. K. Suzuki et al., IEEE Trans. Electron Device (TED), pp. 1297-1305 (2003).
8. C.-H. Jan et al., in Int. Electron Devices Meeting (IEDM) Tech. Dig, pp. 65-68 (2005).