Band-structure effects on the performance of III-V ultrathin-body SOI MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 5, 2008, Pages 1116-1122

  Liu, Yang ^a   Neophytou, Neophytos ^a   Klimeck, Gerhard ^a   Lundstrom, Mark S ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Band structure; Effective mass; III V; Injection velocity; MOSFETs; Nonparabolicity; Quantum confinement; Tight binding (TB); Ultrathin body (UTB)

Indexed keywords

BAND STRUCTURE; CONDUCTION BANDS; QUANTUM CONFINEMENT; SILICON ON INSULATOR TECHNOLOGY; VELOCITY;

BAND-STRUCTURE EFFECTS; INJECTION VELOCITY; NONPARABOLICITY;

MOSFET DEVICES;

EID: 43749112533     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.919290     Document Type: Article

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