Quantum C-V modeling in depletion and inversion: Accurate extraction of electrical thickness of gate oxide in deep submicron MOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 5, 2002, Pages 889-894

  Quan, Wuyun ^b   Kim, Dae M ^b   Lee, Hi Deok ^a,c  

^a IEEE

^b Korea Institute for Advanced Study   (South Korea)

^c Chungnam National University   (South Korea)

Author keywords

Electrical gate oxide thickness; Quantum C V analysis

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRONS; GATES (TRANSISTOR); MATHEMATICAL MODELS; OXIDES; QUANTUM THEORY;

GATE DEPLETION EFFECT; GATE OXIDE THICKNESS; QUANTUM EFFECT;

MOSFET DEVICES;

EID: 0036564041     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.998599     Document Type: Article

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