Lateral and vertical scaling of In0.7Ga0.3As HEMTs for Post-Si-CMOS logic applications

IEEE Transactions on Electron Devices

Volumn 55, Issue 10, 2008, Pages 2546-2553

  Kim, Dae Hyun ^a   del Alamo, Jesús A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

DIBL; Electrostatics; Gate delay; High electron mobility transistor (HEMT); ION IOFF; In0.7Ga0.3As; Logic; Subthreshold swing

Indexed keywords

DIBL; ELECTROSTATICS; GATE DELAY; HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT); ION/IOFF; IN0.7GA0.3AS; LOGIC; SUBTHRESHOLD SWING;

INDIUM;

EID: 53649091591     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2002994     Document Type: Article

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