SCOPUS 정보 검색 플랫폼

Volumn 40, Issue 6, 2011, Pages 1461-1469

Effect of sputtered ZnO layers on behavior of thin-film transistors deposited at room temperature in a nonreactive atmosphere

(7) Medina Montes, M I a Lee, S H b Perez M b Baldenegro Perez L A b Quevedo Lopez M A b Gnade, B b Ramirez Bon R a

a DEPARTAMENTO DE FÍSICA (Mexico)

b The University of Texas at Dallas (United States)

Author keywords

RF magnetron sputtering; thin film transistor; working pressure; Zinc oxide

Indexed keywords

ARGON PRESSURE; DEPOSITION PRESSURES; ELECTRICAL BEHAVIORS; ELECTRICAL CHARACTERIZATION; ELECTRICAL RESISTIVITY; ELECTRON CONCENTRATION; FIELD-EFFECT MOBILITIES; HALL EFFECT MEASUREMENT; HEXAGONAL STRUCTURES; HIGH RESISTANCE; LINEAR BEHAVIOR; POLYCRYSTALLINE; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; WORKING PRESSURE; ZNO FILMS; ZNO LAYERS;

ATMOSPHERIC TEMPERATURE; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; MAGNETRON SPUTTERING; METALLIC FILMS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

ZINC OXIDE;

EID: 79955916489 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-011-1608-y Document Type: Article

Times cited : (17)

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