Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels

Applied Physics Letters

Volumn 96, Issue 12, 2010, Pages

  Lubow, Abigail ^a   Ismail Beigi, Sohrab ^a   Ma, T P ^a  

^a Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRIVE CURRENTS; ELECTRON EFFECTIVE MASS; GAAS; HIGH ELECTRON MOBILITY; INAS; INVERSION CAPACITANCE; LOWER DENSITY; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; N-CHANNEL; NMOS DEVICES;

DIELECTRIC DEVICES; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM ARSENIDE; GERMANIUM; MOSFET DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

SEMICONDUCTING SILICON;

EID: 77950305773     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3367708     Document Type: Article

References (5)

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