Effects of the channel thickness on the structural and electrical characteristics of room-temperature fabricated ZnO thin-film transistors

Semiconductor Science and Technology

Volumn 22, Issue 6, 2007, Pages 608-612

  Oh, Byeong Yun ^a   Jeong, Min Chang ^a   Ham, Moon Ho ^a   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; MAGNETRON SPUTTERING; OPTIMIZATION; THICKNESS MEASUREMENT; THRESHOLD VOLTAGE; ZINC OXIDE;

BOTTOM-GATE CONFIGURATION; CHANNEL THICKNESS; CRYSTALLINE QUALITY; CURRENT RATIO; ROOM TEMPERATURE;

THIN FILM TRANSISTORS;

EID: 34249724977     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/6/004     Document Type: Article

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