Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices

Thin Solid Films

Volumn 487, Issue 1-2, 2005, Pages 212-215

  Pimentel, A ^a   Fortunato, E ^a   Goncalves A ^a   Marques, A ^a   Aguas H ^a   Pereira, L ^a   Ferreira, I ^a   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

Author keywords

Electrical properties; rf magnetron sputtering; Thin films; ZnO

Indexed keywords

CHEMICAL SENSORS; DEPOSITION; ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; MORPHOLOGY; OPACITY; PARTIAL PRESSURE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS; THIN FILMS;

RF MAGNETRON SPUTTERING; ROOM TEMPERATURE; STRUCTURAL PROPERTIES; WURTZITE;

ZINC OXIDE;

EID: 22944488292     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.01.067     Document Type: Conference Paper

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