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Applied Physics A: Materials Science and Processing

Volumn 62, Issue 5, 1996, Pages 487-492

Scattering mechanisms of charge carriers in transparent conducting oxide films

(2) Zhang, D H a Ma, H L a

a SHANDONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CONDUCTIVE FILMS; CRYSTAL IMPURITIES; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FILM PREPARATION; GRAIN BOUNDARIES; LATTICE VIBRATIONS; MATHEMATICAL MODELS; OXIDES; THERMAL EFFECTS;

CRYSTALLITE SIZES; HALL MEASUREMENTS; IONIZED IMPURITY SCATTERING MOBILITY; THERMAL LATTICE VIBRATION SCATTERING; TRANSPARENT CONDUCTING OXIDE FILMS; TUNNELING CURRENT;

CHARGE CARRIERS;

EID: 0030145375 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/BF01567122 Document Type: Article

Times cited : (264)

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