Electrical properties of ZnO-based bottom-gate thin film transistors fabricated by using radio frequency magnetron sputtering

Journal of Alloys and Compounds

Volumn 475, Issue 1-2, 2009, Pages 889-892

  Navamathavan, R ^a   Choi, Chi Kyu ^a   Park, Seong Ju ^b  

^a Jeju National University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Electrical properties; Field effect mobility; Thin film transistor; Zinc oxide

Indexed keywords

DIFFRACTION; DRAIN CURRENT; ELECTRIC PROPERTIES; ELECTRODEPOSITION; HOLOGRAPHIC INTERFEROMETRY; MAGNETRON SPUTTERING; MAGNETRONS; RADIO; RADIO WAVES; SEMICONDUCTING ZINC COMPOUNDS; SILICON NITRIDE; THIN FILM TRANSISTORS; THIN FILMS; TIN; TITANIUM COMPOUNDS; ZINC;

ACTIVE CHANNEL LAYERS; CORNING GLASS; DENSE COLUMNAR STRUCTURES; ELECTRICAL PROPERTIES; ENHANCEMENT MODES; FIELD EFFECT MOBILITY; GATE INSULATORS; INDIUM TIN OXIDES; N CHANNELS; NANO GRAINS; OFF CURRENTS; ON/OFF RATIOS; RADIO FREQUENCY MAGNETRON SPUTTERING; TRANSFER CHARACTERISTICS; X-RAY DIFFRACTION PATTERNS; ZNO;

ZINC OXIDE;

EID: 63649152574     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2008.08.039     Document Type: Article

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