Influence of the channel layer thickness on electrical properties of indium zinc oxide thin-film transistor

Microelectronic Engineering

Volumn 87, Issue 10, 2010, Pages 2019-2023

  Chen, Ai Hua ^a   Cao, Hong Tao ^a   Zhang, Hai Zhong ^a   Liang, Ling Yan ^a   Liu, Zhi Min ^a   Yu, Zheng ^a   Wan, Qing ^a,b  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

^b HUNAN UNIVERSITY   (China)

Author keywords

Indium zinc oxide; Interface scattering; Rf Magnetron sputtering; Thin film transistor

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; FILM THICKNESS; INDIUM; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; ZINC; ZINC OXIDE;

CHANNEL LAYER THICKNESS; FIELD-EFFECT MOBILITIES; INDIUM ZINC OXIDES; INTERFACE SCATTERING; PERFORMANCE OF DEVICES; RF-MAGNETRON SPUTTERING; SUBTHRESHOLD VOLTAGES; THIN-FILM TRANSISTOR (TFTS);

THIN FILM TRANSISTORS;

EID: 78951477533     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.12.081     Document Type: Article

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