Enhanced performances of ZnO-TFT by improving surface properties of channel layer

Solid State Communications

Volumn 146, Issue 9-10, 2008, Pages 387-390

  Zhang, Liang ^b   Zhang, Hao ^a   Bai, Yu ^b   Ma, Jun Wei ^b   Cao, Jin ^a   Jiang, XueYin ^b   Zhang, Zhi Lin ^a,b  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b SHANGHAI UNIVERSITY   (China)

Author keywords

A. Thin film transistor; A. ZnO; B. RF sputtering; C. Surface morphology

Indexed keywords

MAGNETRON SPUTTERING; SURFACE MORPHOLOGY; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

CHANNEL LAYERS; FIELD EFFECT MOBILITY; RF SPUTTERING;

ZINC OXIDE;

EID: 43049157966     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2008.03.036     Document Type: Article

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