Investigation of the effects of interface carrier concentration on ZnO thin film transistors fabricated by atomic layer deposition

Journal of Physics D: Applied Physics

Volumn 42, Issue 23, 2009, Pages

  Bang, Seokhwan ^a   Lee, Seungjun ^a   Park, Joohyun ^a   Park, Soyeon ^a   Jeong, Wooho ^a   Jeon, Hyeongtag ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; CHANNEL RESISTANCE; DEVICE PERFORMANCE; DIFFERENT PROCESS; DOUBLE CHANNEL; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; OFF-CURRENT; PROCESS TEMPERATURE; SATURATION MOBILITY; SINGLE CHANNELS; SUBTHRESHOLD SWING; TEMPERATURE DEPENDENCE; TURN ON VOLTAGE; ZNO; ZNO FILMS; ZNO THIN FILM;

ATOMIC LAYER DEPOSITION; BIOACTIVITY; CARRIER CONCENTRATION; DEPOSITION; ELECTRIC PROPERTIES; METALLIC FILMS; NONVOLATILE STORAGE; SEMICONDUCTING ZINC COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS;

ZINC OXIDE;

EID: 70450160011     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/23/235102     Document Type: Article

References (28)

1. Ju S, Facchetti A, Xuan Y, Liu J, Ishikawa F, Ye P, Zhou C, Marks T J and Janes D B 2007 Nature Nanotechnol. 2 378
2. Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488
3. Fortunato E M, Barquinha P M C, Pimentel A C M B G, Gocalves A M F, Marques A J S, Pereira L M N and Marins R F P 2005 Adv. Mater. 17 590
4. Jeong J K et al 2009 J. Soc. Inf. Disp. 17 95
5. Chen M C, Chang T C, Huang S Y, Chang K C, Li H W, Chen S C, Lu J and Shi Y 2009 Appl. Phys. Lett. 94 162111
6. Shin P K, Aya Y, Ikegami T and Ebihara K 2008 Thin Solid Films 516 3767
7. Ong B S, Li C, Li Y, Wu Y and Loutfy R 2007 J. Am. Chem. Soc. 129 2750
8. Jo J Y, Seo O W, Jeong E H, Seo H S, Lee B G and Choi Y I 2007 Japan. J. Appl. Phys. 46 2493
9. Kwon S M, Bang S H, Lee S J, Jeon S Y, Jeong W H, Kim H C, Gong S C, Chang H J, Park H H and Jeon H T 2009 Semicond. Sci. Technol. 24 035015
10. Kang K T, Lim M H and Kim H G 2007 Appl. Phys. Lett. 90 043502
11. Carcia P F, McLean R S and Reilly M H 2006 Appl. Phys. Lett. 88 123509
12. Cubulla R, Weridt R and Ellmer K 1998 J. Appl. Phys. 83 1087
13. Coppa B J, Davis R F and Nemanich R J 2003 Appl. Phys. Lett. 82 400
14. Wang Z G, Zu X T, Zhu S and Wang L M 2006 Physica E 35 199-202
15. Fan J C C and Goodenough J B 1977 J. Appl. Phys. 48 3524
16. Islam M N, Ghosh T B, Chopa K L, Ma H L and Chen Y 1996 Thin Solid Films 280 20
17. Dupin J C, Gonbeau D, Vinatier P and Levasseur A 2000 Phys. Chem. Chem. Phys. 2 1319
18. Szorenyi T, Laude L D, Bertoti I, Kantor Z and Gereto Vszky Z 1995 J. Appl. Phys. 78 6211
19. Remashan K, Hwang D K, Park S D, Bae J W, Yeom G Y, Park S J and Jang J H 2008 Electrochem. Solid-State Lett. 11 H55
20. Moulder J F, Stickle W F, Sobol P E and Bomben K D 1995 Handbook of X-ray Photoelectron Spectroscopy ed J Chastain and R C King Jr (Eden Prairie, MN: Physical Electronics)
21. Kim S K, Hwang C S, Park S-H K and Yun S J 2005 Thin Solid Films 478 103
22. Hendrich V E and Cox P A 1994 The Surface Science of Metal Oxide (Cambridge: Cambridge University Press) pp 296-313
23. Huby N, Guziewicz E, Godlewski M, Osinniy V and Ferrari S 2008 Appl. Phys. Lett. 92 023502
24. Jeon S Y, Bang S H, Lee S J, Kwon S M, Jeong W H, Chang H J, Park H H and Jeon H T 2008 J. Electrochem. Soc. 155 H738
25. Hoffman R L, Norrs B H and Wagner J F 2003 Appl. Phys. Lett. 82 733
26. Brown A R, Jarrett C P, de Leeuw D M and Matters M 1997 Synth. Met. 88 37
27. Goetzberger A and Nicollian E H 1967 Appl. Phys. Lett. 10 60
28. Rode D L 1975 Semicond. Semimet. 10 1