A review of recent MOSFET threshold voltage extraction methods

Microelectronics Reliability

Volumn 42, Issue 4-5, 2002, Pages 583-596

  Ortiz Conde, A ^a   Garcia Sanchez F J ^a   Liou, J J ^b,e   Cerdeira, A ^c   Estrada, M ^c   Yue, Y ^d  

^a UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

^b University of Central Florida   (United States)

^c DEPARTAMENTO DE FÍSICA   (Mexico)

^d INTERSIL CORPORATION   (United States)

^e HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; GATES (TRANSISTOR); SINGLE CRYSTALS; THIN FILMS; THRESHOLD VOLTAGE;

DRAIN CURRENTS; GATE VOLTAGE TRANSFER CHARACTERISTICS;

MOSFET DEVICES;

EID: 0036540852     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00027-6     Document Type: Article

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