ZnO-based thin film transistors having high refractive index silicon nitride gate

Applied Physics Letters

Volumn 91, Issue 18, 2007, Pages

  Remashan, K ^a   Jang, J H ^a   Hwang, D K ^a   Park, S J ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; HYDROGENATION; REFRACTIVE INDEX; SILICON NITRIDE; ZINC OXIDE;

FIELD EFFECT MOBILITY; SUBTHRESHOLD SLOPE;

THIN FILM TRANSISTORS;

EID: 35649010876     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2804566     Document Type: Article

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