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Volumn 47, Issue 3 PART 1, 2008, Pages 1501-1506
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Comparison of electrical, optical, and structural properties of RF-sputtered ZnO thin films deposited under different gas ambients
a,b
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Author keywords
H2 gas; Magnetron sputtering; PL spectroscopy; ZnO:Al thin film
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Indexed keywords
ALUMINUM;
ARGON;
ATOMIC SPECTROSCOPY;
BIOACTIVITY;
CARRIER CONCENTRATION;
CARRIER MOBILITY;
CIVIL AVIATION;
CONCENTRATION (PROCESS);
CONDUCTIVE FILMS;
CRYSTALLITE SIZE;
ELECTRIC CURRENTS;
ELECTRIC RESISTANCE;
EMISSION SPECTROSCOPY;
FILM PREPARATION;
GALVANOMAGNETIC EFFECTS;
GASES;
HALL EFFECT;
HALL MOBILITY;
LEAKAGE (FLUID);
LIGHT EMISSION;
LUMINESCENCE;
MAGNETRON SPUTTERING;
MAGNETRONS;
METALLIC FILMS;
OPTICAL FILMS;
OPTICAL MICROSCOPY;
OPTICAL PROPERTIES;
SEMICONDUCTING ZINC COMPOUNDS;
SOLIDS;
SURFACE TOPOGRAPHY;
THICK FILMS;
THIN FILMS;
X RAY ANALYSIS;
X RAY DIFFRACTION ANALYSIS;
ZINC ALLOYS;
ZINC OXIDE;
ATOMIC FORCES;
BLUE EMISSIONS;
C -AXIS;
ELECTRICAL;
ELECTRICAL RESISTIVITIES;
GAS AMBIENTS;
H2 GAS;
HALL EFFECT MEASUREMENTS;
HALL MEASUREMENTS;
HIGH BAND GAPS;
HIGH STRAINS;
NEAR-IR;
OPTICAL;
PHOTO-LUMINESCENCE;
PL SPECTROSCOPY;
TRANSPARENT CONDUCTING;
UV-VISIBLE;
X-RAY DIFFRACTIONS;
ZNO FILMS;
ZNO THIN FILMS;
ZNO:AL FILMS;
ZNO:AL THIN FILM;
ZNO:AL THIN FILMS;
MAGNETIC FIELD EFFECTS;
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EID: 54249101902
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.1501 Document Type: Article |
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Times cited : (22)
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References (30)
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