High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO

Applied Physics Letters

Volumn 91, Issue 18, 2007, Pages

  Lim, S J ^a   Kwon, Soon Ju ^a   Kim, Hyungjun ^a   Park, Jin Seong ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Samsung SDI   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ZINC OXIDE;

GATE INSULATORS; HIGH PERFORMANCE THIN FILM TRANSISTOR; IN SITU NITROGEN DOPING; SUBTHRESHOLD SWING;

THIN FILM TRANSISTORS;

EID: 35649020699     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2803219     Document Type: Article

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