Dependence of channel thickness on the performance of In2O 3 thin film transistors

Journal of Physics D: Applied Physics

Volumn 41, Issue 9, 2008, Pages

  Dhananjay, ^a   Cheng, Shiau Shin ^b   Yang, Chuan Yi ^b   Ou, Chun Wei ^b   Chuang, You Che ^b   Chyi Wu, M ^b   Chu, Chih Wei ^a,c  

^a RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON TRAPS; INDIUM COMPOUNDS; MEAN SQUARE ERROR; THERMAL EVAPORATION; THIN FILMS;

ACTIVE CHANNEL LAYERS; CHANNEL THICKNESS; DENSE GRAIN DISTRIBUTION; HIGH PURITY OXYGEN;

THIN FILM TRANSISTORS;

EID: 42549090490     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/9/092006     Document Type: Article

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