Epitaxial growth of ZnO thin films on Si substrates by PLD technique

Journal of Crystal Growth

Volumn 280, Issue 3-4, 2005, Pages 455-461

  Zhao, Jie ^a   Hu, Lizhong ^a   Wang, Zhaoyang ^a   Wang, Zhijun ^a   Zhang, Heqiu ^a   Zhao, Yu ^a   Liang, Xiuping ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

A1. Photoluminescence; A1. Reflection high energy electron diffraction; A1. X ray diffraction; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; SUBSTRATES; TEMPERATURE DISTRIBUTION; THIN FILMS; ULTRAVIOLET RADIATION;

BUFFER LAYERS; SEMICONDUCTING II_VI MATERIALS; SUBSTRATE TEMPERATURES; WURTZITE STRUCTURES;

ZINC COMPOUNDS;

EID: 20344363927     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.03.071     Document Type: Article

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