Effect of thickness of ZnO active layer on ZnO-TFT's characteristics

Thin Solid Films

Volumn 516, Issue 16, 2008, Pages 5597-5601

  Chung, J H ^a   Lee, J Y ^a   Kim, H S ^a   Jang, N W ^a   Kim, J H ^b  

^a Korea Maritime University   (South Korea)

^b Chonnam National University   (South Korea)

Author keywords

Thickness effect; Thin film transistor; ZnO

Indexed keywords

CARRIER MOBILITY; FILM THICKNESS; GATE DIELECTRICS; SPUTTERING; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ZINC OXIDE;

ACTIVE LAYERS; BOTTOM GATE PATTERNED SI SUBSTRATES; CHANNEL LAYERS; FIELD EFFECT MOBILITY; THICKNESS EFFECTS;

THICKNESS CONTROL;

EID: 43949087179     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.07.107     Document Type: Article

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