The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 8, 2010, Pages 1845-1849

  Lee, Seungjun ^a   Bang, Seokhwan ^a   Park, Joohyun ^a   Park, Soyeon ^a   Jeong, Wooho ^a   Jeon, Hyeongtag ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDING STATE; EFFECT OF OXYGEN; ELECTRICAL CHARACTERISTIC; ELECTRICAL PROPERTY; OXYGEN DEFICIENT; PLASMA EXPOSURE; PLASMA TREATMENT; REMOTE PLASMA TREATMENT; SATURATION MOBILITY; SUBTHRESHOLD SWING; XPS SPECTRA; ZNO; ZNO FILMS; ZNO THIN FILM;

ATOMIC LAYER DEPOSITION; CARRIER CONCENTRATION; CHEMICAL BONDS; DEPOSITION; ELECTRIC PROPERTIES; METALLIC FILMS; OPTICAL FILMS; OXYGEN; PLASMAS; THIN FILM TRANSISTORS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

PLASMA DEPOSITION;

EID: 77957937632     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925514     Document Type: Article

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