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Volumn 46, Issue 4 B, 2007, Pages 2493-2495

Effect of hydrogen in zinc oxide thin-film transistor grown by metal organic chemical vapor deposition

Author keywords

Hydrogen; MOCVD; Thin film transistor; ZnO

Indexed keywords

FILM GROWTH; GROWTH TEMPERATURE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC OXIDE;

CRYSTAL QUALITY; MOCVD GROWTH; ON/OFF RATIO; TRANSISTOR CHARACTERISTICS;

THIN FILM TRANSISTORS;

EID: 34547907149 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.2493 Document Type: Article

Times cited : (31)

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