Effect of N2 O plasma treatment on the performance of ZnO TFTs

Electrochemical and Solid-State Letters

Volumn 11, Issue 3, 2008, Pages

  Remashan, K ^a   Hwang, D K ^a   Park, S D ^b   Bae, J W ^b   Yeom, G Y ^b   Park, S J ^a   Jang, J H ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN COMPOUNDS; OXYGEN VACANCIES; PLASMA DIAGNOSTICS; THIN FILM TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

AS-DEPOSITED SAMPLES; CURRENT RATIO; NITROUS OXIDE; PLASMA TREATMENT; POSTFABRICATION;

RAPID THERMAL ANNEALING;

EID: 38349085365     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2822885     Document Type: Article

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