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Volumn 509, Issue 22, 2011, Pages 6433-6439

Temperature dependent current-voltage and capacitance-voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

(5) Demircioglu, O a Karatas S b Yildirim, N c Bakkaloglu, O F a Turut A d

a GAZIANTEP UNIVERSITY (Turkey)

b KAHRAMANMARAS SUTCU IMAM UNIVERSITY (Turkey)

c BINGOL UNIVERSITY (Turkey)

d ATATÜRK UNIVERSITY (Turkey)

Author keywords

I V T and C V T characteristics; Schottky barrier inhomoheneities; Si

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE VOLTAGE CHARACTERISTIC; CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT VOLTAGE; DIODE PARAMETERS; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; ELECTRODEPOSITION TECHNIQUE; IDEALITY FACTORS; IV CHARACTERISTICS; SCHOTTKY BARRIER INHOMOHENEITIES; SCHOTTKY CONTACTS; SI; SI SUBSTRATES; STANDARD DEVIATION; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE DEPENDENT I-V CHARACTERISTICS; TEMPERATURE RANGE; TWO-TEMPERATURE; V-T CHARACTERISTICS;

CAPACITANCE; CHROMIUM; ELECTRODEPOSITION; GAUSSIAN DISTRIBUTION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79955584241 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2011.03.082 Document Type: Article

Times cited : (47)

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