The theoretical and experimental study on double-Gaussian distribution in inhomogeneous barrier-height Schottky contacts

Microelectronic Engineering

Volumn 87, Issue 11, 2010, Pages 2225-2229

  Yildirim, Nezir ^a   Turut, Abdulmecit ^b   Turut, Veyis ^c  

^a BINGOL UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

^c BATMAN UNIVERSITY   (Turkey)

Author keywords

Barrier inhomogeneity; Double Gaussian distribution; Schottky barrier diode

Indexed keywords

BARRIER INHOMOGENEITIES; BARRIER INHOMOGENEITY; DOUBLE-GAUSSIAN DISTRIBUTION; EXPERIMENTAL STUDIES; GAUSSIAN DISTRIBUTION MODEL; GAUSSIAN MODEL; HIGH TEMPERATURE; I - V CURVE; IDEALITY FACTORS; LOW TEMPERATURES; NON-INTERACTIVE; SCHOTTKY CONTACTS; SCHOTTKY DIODES;

DIODES; GAUSSIAN DISTRIBUTION;

SCHOTTKY BARRIER DIODES;

EID: 77955513056     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.02.007     Document Type: Article

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