The effect of high temperature annealing on Schottky diode characteristics of Au/n-Si contacts

Vacuum

Volumn 84, Issue 6, 2010, Pages 812-816

  Nuhoǧlu, Çiǧdem ^a   Gülen, Yasir ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Metal semiconductor contact; Schottky barrier diodes; Schottky barrier height

Indexed keywords

ANNEALING PROCESS; ANNEALING TEMPERATURES; BARRIER HEIGHTS; CAPACITANCE VOLTAGE CHARACTERISTIC; CURRENT VOLTAGE; ELECTRONIC PARAMETERS; FERMI ENERGY LEVELS; FORWARD CURRENTS; HIGH-TEMPERATURE ANNEALING; IDEAL BEHAVIOR; IDEALITY FACTORS; METAL-SEMICONDUCTOR CONTACT; METAL-SEMICONDUCTOR CONTACTS; REVERSE-BIAS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SI SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE;

ANNEALING; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; GRAFTING (CHEMICAL); METAL ANALYSIS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR METAL BOUNDARIES; SYNTHESIS (CHEMICAL); THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 74649085607     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.10.049     Document Type: Article

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