Electrical characteristics and inhomogeneous barrier analysis of aniline green/p-Si heterojunctions

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 10, 2008, Pages 986-991

  Gullu O ^a   Biber, M ^a   Turiut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DOPING; BARRIER HEIGHT (BH); CAPACITANCE-VOLTAGE (C-V) CHARACTERISTICS; CURRENT VOLTAGE; CURRENT VOLTAGE (I V) CHARACTERISTICS; CURRENT-VOLTAGE (C-V) MEASUREMENTS; ELECTRICAL CHARACTERISTICS; IDEALITY FACTORS; ORGANIC THIN FILMS; ORGANIC-INORGANIC; RECTIFYING BEHAVIORS; SEMICONDUCTOR WAFERS; SI HETEROJUNCTIONS; SI(2 1 1) SUBSTRATES;

ANILINE; ELECTRONICS INDUSTRY; EPITAXIAL GROWTH; MICROELECTRONICS; NEGATIVE IONS; ORGANIC COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICON; SILICON WAFERS; THICK FILMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 46849113843     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9431-1     Document Type: Article

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