Temperature-dependent current-voltage and capacitance-voltage characteristics of the Ag/n-InP/In Schottky diodes

Journal of Materials Science: Materials in Electronics

Volumn 20, Issue 2, 2009, Pages 105-112

  Cimilli, F E ^a   Efeoglu H ^a   Saglam M ^a   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CAPACITANCE VOLTAGES; EXPERIMENTAL VALUES; IDEALITY FACTORS; IN HOMOGENEITIES; NON LINEARITIES; RICHARDSON CONSTANTS; SCHOTTKY; SCHOTTKY DIODES; SEMI-CONDUCTORS; TEMPERATURE DEPENDENTS; TEMPERATURE REGIONS; WIDE TEMPERATURE RANGES;

ACTIVATION ENERGY; CAPACITANCE; EXPERIMENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 58249088866     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9635-z     Document Type: Article

References (51)

1. M. Oztas, M. Bedir, R. Kayali, F. Aksoy, Mater. Sci. Eng. B 131, 94 (2006)
2. E.H. Rhoderick, R.H. Williams, Metal-Semiconductor Contacts (Clarandon Press, Oxford University Press, 1988)
3. R.H. Williams, G.Y. Robinson, in Physics and Chemistry of III-V Compound Semiconductor Interfaces, ed. by C.W. Wilmsen (Plenum Press, New York 1985)
4. H. Cetin, E. Ayyildiz, Semicond. Sci.Technol. 20, 625 (2005); Appl. Surf. Sci. 253, 5961 (2007); H. Cetin, E. Ayyildiz, A. Turut, J. Vac. Sci. Technol. B 23, 2436 (2005)
5. R.L. Van Meirhaeghe, W.H. Laflére, F. Cardon, J. Appl. Phys. 76, 403 (1994)
6. M.E. Aydin, N. Yildirim, A. Turut, J. Appl. Phys. 102 (4), 043701 (2007)
7. A. Sellai, M. Mamor, Appl. Phys. A 89, 503 (2007); M. Mamor, A. Sellai, K. Bouziane, S.H. Al Harthi, M. Al Busaidi, F.S. Gard, J. Phys. D: Appl. Phys. 40, 1351 (2007)
8. A.R. Arehart, B. Moran, J.S. Speck, U.K. Mishra, S.P. DenBaars, S.A. Ringel, J. Appl. Phys. 100, 023709 (2006)
9. D.M. Kim, D.H. Kim, S.Y. Lee, Solid-State Electron. 51, 865 (2007)
10. A.F. Qasrawi, Semicond. Sci. Technol. 21, 794 (2006)
11. M.M. El-Nahass, H.M. Zeyada, K.F. Abd-El-Rahman, A.A.A. Darwish, Sol. Energy Mater. Sol. Cells 91, 1120 (2007)
12. N. Rouag, L. Boussouar, S. Toumi, Z. Ouennoughi, M.A. Djouadi, Semicond. Sci. Technol. 22 (4), 369 (2007)
13. R. Pérez, N. Mestres, J. Montserrat, D. Tournier, P. Godignon, Phys. Stat. Sol. (a) 202 (4), 692 (2005)
14. M. Ozer, D.E. Yildiz, S. Altindal, M.M. Bulbul, Solid-State Electron. 51 (6), 941 (2007)
15. F. Roccaforte, F. La Via, V. Raineri, R. Pierobon, E. Zanoni, J. Appl. Phys. 93 (11), 9137 (2003)
16. C.F. Pirri, S. Ferrero, L. Scaltrito, D. Perrone, S. Guastella, M. Furno, G. Richieri, L. Merlin, Microelectron. Engineer. 83, 86 (2006)
17. K.V. Vassilevski, I.P. Nikitina, N.G. Wright, A.B. Horsfall, A.G. O'Neill, C.M. Johnson, Microelectron. Eng. 83, 150 (2006)
18. M. Pattabi, S. Krishnan, Ganesh, X. Mathew, Sol. Energy 81 (1), 111 (2007); M. Pattabi, S. Krishnan, G. Sanjeev, Sol Energ Mat Sol C 91, 1521 (2007)
19. I. Dokme, S. Altindal, M.M. Bulbul, Appl. Surf. Sci. 252 (22), 7749 (2006); I. Dokme, S. Altindal, Semicond. Sci. Technol. 21 (8), 1053 (2006)
20. F. Yakuphanoglu, Physica B 389 (2), 306 (2007)
21. S. Kumar, Y.S. Katharria, S. Kumar, D. Kanjilal, J. Appl. Phys. 100, 113723 (2006)
22. F. Brovelli, B.L. Rivas, J.C. Bernede, J. Chilean Chem. Soc. 52 (1), 1065 (2007)
23. N.L. Dimitruk, O.Yu. Borkovskaya, I.N. Dimitruk, S.V. Mamykin, Zs.J. Horvath, I.B. Mamontova, Appl. Surf. Sci. 190, 455 (2002)
24. S.W. Kim, K.M. Lee, J.H. Lee, K.S. Seo, IEEE Electron Device Lett. 26 (11), 787 (2005)
25. H. von Wenckstern, G. Biehne, R.A. Rahman, H. Hochmuth, M. Lorenz, M. Grundmann, Appl. Phys. Lett. 88 (9), 092102 (2006)
26. J. Osvald, Z.J. Horvath, Appl. Surf. Sci. 234 (1-4), 349-354 (2004)
27. Zs.J. Horváth, Solid-State Electron. 39, 176 (1996); E. Ayyildiz, H. Cetin, Zs.J. Horvath, Appl. Surface Sci. 252, 1153 (2005)
28. F.E. Jones, C.D Hafer, B.P. Wood, R.G. Danner, M.C. Lonergan, J. Appl. Phys. 90, 1001 (2001)
29. H.J. Im, Y. Ding, J.P. Pelz, W.J. Choyke, Phys. Rev. B, 64 (7), 075310 (2001)
30. R.C. Rossi, N.S. Lewis, J. Phys. Chem. B 105 (17), 12303 (2001)
31. Y.P. Song, R.L.Van Meirhaeghe, W.H. Laflére, F. Cardon, Solid-State Electron. 29, 633 (1986)
32. J.H. Werner, H.H. Güttler, J. Appl. Phys. 69, 1522 (1991)
33. S. Chand, J. Kumar, J. Appl. Phys. 82, 5005 (1997); S. Chand, S. Bala, Appl. Surf. Sci. 252, 358 (2005); S. Chand, J. Kumar, Appl. Phys. A 65, 497 (1997)
34. S. Zhu, R.L. Van Meirhaeghe, S. Forment, G. Ru, B. Li, Solid-State Elecron. 48, 29 (2004)
35. J. Osvald, J. Appl. Phys. 85 (3), 1935 (1999); E. Dobrocka, J. Osvald, Appl. Phys. Lett. 65, 575 (1994); J. Osvald, Solid-State Electron. 50, 228 (2006)
36. H. Dogan, N. Yildirim, A. Turut, M. Biber, E. Ayyildiz, C. Nuhoglu, Semicond. Sci.Technol. 21, 822 (2006)
37. R.T. Tung, Phys. Rev. B. 45, 13509 (1992)
38. J.P. Sullivan, R.T. Tung, M.R. Pinto, W.R. Graham, J. Appl. Phys. 70, 7403 (1991)
39. S. Huang, B. Shen, M.J. Wang, F.J. Xu, Y. Wang, H.Y. Yang, F. Lin, L. Lu, Z.P. Chen, Z.X. Qin, Z.J. Yang, G.Y. Zhang, Appl. Phys. Lett. 91, 072109 (2007)
40. A. Gümülş, A. Türüt, N. Yalçin, J. Appl. Phys. 91, 245 (2002)
41. N. Newman, M. van Schilfgaarde, T. Kendelewicz, D.M. Williams, W.E. Spicer, Phys. Rev. B33, 1146 (1986)
42. Zs.J. Horvath, J. Appl. Phys. 64, 6780 (1988)
43. T. Teraji, S. Hara, Phys. Rev. B 70, 035312 (2004)
44. Zs.J. Horvath, V. Rakovics, B. Szentpali, S. Puspoki, K. Zdansky, Vacuum 71, 113 (2003)
45. S. Karatas, S. Altindal, A. Türüt, A. Özmen, Appl. Surf. Sci. 217, 250 (2003)
46. G.M. Vanalme, L. Goubert, R.L. Van Meirhaeghe, F. Cardon, P. van Daele, Semicond. Sci. Technol. 14, 871 (1999)
47. G.M. Vanalme, R.L. van Meirhaeghe, F. Cardon, P. van Daele, Semicond. Sci.Technol. 12, 907 (1997)
48. A.R.V. Roberts, D.A. Evans, Appl. Phys. Lett. 86, 072105 (2005)
49. T.U. Kampen, S. Park, D.R.T. Zahn, Appl. Surf. Sci. 190, 461 (2002)
50. T. Kampen, A. Schuller, D.R.T Zahn, B. Biel, J. Ortega, R. Perez, F. Flores, Appl. Surf. Sci. 234 (1-4), 341 (2004)
51. S. Chand, J. Kumar, Semicond. Sci.Technol. 11, 1203 (1996)